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NTMFS4744NT1G

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NTMFS4744NT1G

MOSFET N-CH 30V 7A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4744NT1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 7A at 25°C ambient temperature. With a low on-resistance (Rds On) of 7.6mOhm at 30A and 10Vgs, it minimizes conduction losses. The device offers a maximum gate charge (Qg) of 17nC at 4.5Vgs and an input capacitance (Ciss) of 1300pF at 12Vds. It is housed in a 5-DFN (5x6) package with 8-SOFL pin configuration, suitable for surface mounting. Maximum power dissipation is 880mW (Ta) and 47.2W (Tc). Operating temperature range is -55°C to 150°C. This component is utilized in industries such as automotive, industrial, and consumer electronics for power conversion and switching circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Rds On (Max) @ Id, Vgs7.6mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)880mW (Ta), 47.2W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 12 V

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