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NTMFS4708NT3G

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NTMFS4708NT3G

MOSFET N-CH 30V 7.8A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4708NT3G is an N-Channel Power MOSFET designed for efficient power management applications. This device features a drain-source breakdown voltage of 30V and a continuous drain current capability of 7.8A at 25°C, with a maximum power dissipation of 1W under the same conditions. The Rds(On) is specified at a maximum of 10 mOhm at 11.5A and 10V gate drive, ensuring low conduction losses. It operates with gate drive voltages ranging from 4.5V to 10V, and exhibits a typical gate charge of 15 nC at 4.5V. Input capacitance (Ciss) is rated at a maximum of 970 pF at 24V. The NTMFS4708NT3G utilizes advanced MOSFET technology and is housed in an 8-PowerTDFN, 5-lead package (5x6 DFN, 8-SOFL) for surface mounting. Its operational temperature range is -55°C to 150°C (TJ). This component is suitable for use in automotive and industrial power control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.8A (Ta)
Rds On (Max) @ Id, Vgs10mOhm @ 11.5A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds970 pF @ 24 V

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