NTMFS4707NT3G
MOSFET N-CH 30V 6.9A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4707NT3G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain current (Id) capability of 6.9 A at 25°C, with a maximum power dissipation of 1W. Optimized for performance, its Rds(On) is specified at a low 13 mOhm at 10A and 10V gate drive. The device operates with a gate drive range of 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. Key electrical parameters include a maximum gate charge (Qg) of 15 nC at 4.5V and a maximum input capacitance (Ciss) of 735 pF at 24V. It is supplied in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, suitable for surface mounting. This MOSFET is engineered for operation across a wide temperature range of -55°C to 150°C (TJ). The NTMFS4707NT3G is commonly utilized in power management, automotive, and industrial control systems. The component is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 735 pF @ 24 V |
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