Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

NTMFS4707NT1G

Banner
productimage

NTMFS4707NT1G

MOSFET N-CH 30V 6.9A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4707NT1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 6.9A at 25°C, with a maximum power dissipation of 1W. The Rds(On) is specified at a maximum of 13mOhm at 10A and 10V. The device utilizes advanced MOSFET technology and is housed in a compact 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, suitable for surface mounting. Key electrical parameters include a Gate Charge (Qg) of 15 nC at 4.5V and Input Capacitance (Ciss) of 735 pF at 24V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly employed in power management solutions across various industries including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6.9A (Ta)
Rds On (Max) @ Id, Vgs13mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds735 pF @ 24 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy