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NTMFS4701NT1G

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NTMFS4701NT1G

MOSFET N-CH 30V 7.7A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4701NT1G is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a 30 V drain-source voltage (Vdss) and a continuous drain current of 7.7 A at 25°C (Ta), this device offers low on-resistance (Rds On) of 8 mOhm at 20 A and 10 Vgs. Its 5-DFN (5x6) package, also known as 8-PowerTDFN with 5 leads, ensures efficient thermal management with a maximum power dissipation of 900 mW (Ta). The MOSFET supports gate drive voltages from 4.5 V to 10 V, with a maximum gate charge (Qg) of 15 nC at 4.5 V and input capacitance (Ciss) of 1280 pF at 24 V Vds. Operating across a wide temperature range of -55°C to 150°C (TJ), this component is suitable for automotive, industrial, and consumer electronics power management solutions. The NTMFS4701NT1G is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.7A (Ta)
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1280 pF @ 24 V

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