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NTMFS4122NT1G

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NTMFS4122NT1G

MOSFET N-CH 30V 9.1A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4122NT1G is a 30V N-Channel Power MOSFET designed for high-efficiency power management applications. Featuring a low Rds(on) of 6 mOhm at 14A and 10V Vgs, this component ensures minimal conduction losses. It is available in a compact 5-DFN (5x6) package with 8-PowerTDFN, 5 Leads, suitable for space-constrained designs. The MOSFET boasts a continuous drain current capability of 9.1A (Ta) and a maximum power dissipation of 900mW (Ta). Key parameters include a gate charge of 30 nC @ 4.5 V and input capacitance of 2310 pF @ 24 V. Operating across a temperature range of -55°C to 150°C (TJ), the NTMFS4122NT1G is well-suited for use in automotive, industrial, and consumer electronics power conversion circuits.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.1A (Ta)
Rds On (Max) @ Id, Vgs6mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2310 pF @ 24 V

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