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NTMFS4121NT1G

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NTMFS4121NT1G

MOSFET N-CH 30V 11A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

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The onsemi NTMFS4121NT1G is an N-Channel Power MOSFET designed for demanding power management applications. This component features a 30V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 11A at 25°C. Its low on-resistance, specified at a maximum of 5.25mOhm at 24A and 10V gate-source voltage, is crucial for minimizing conduction losses. The device offers a gate charge (Qg) of 40nC at 4.5V, enabling efficient switching. With a maximum power dissipation of 900mW at 25°C, the NTMFS4121NT1G is suitable for thermal management in compact designs. It operates across a wide temperature range of -55°C to 150°C. The component is housed in a 5-DFN (5x6) package, referred to as 8-PowerTDFN, 5 Leads, facilitating surface mounting. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics power conversion circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Rds On (Max) @ Id, Vgs5.25mOhm @ 24A, 10V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 24 V

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