NTMFS4120NT1G
MOSFET N-CH 30V 11A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMFS4120NT1G is an N-Channel Power MOSFET designed for efficient power management applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 11 A at 25°C. Its low on-resistance (Rds On) of 4.5 mOhm at 26 A and 10 V gate drive ensures minimal conduction losses. The device is housed in a compact 5-DFN (5x6) package, also referenced as 8-PowerTDFN, suitable for surface mounting. With a maximum power dissipation of 900 mW and an operating temperature range of -55°C to 150°C, it is engineered for reliability in demanding environments. Key electrical characteristics include a gate charge (Qg) of 50 nC at 4.5 V and an input capacitance (Ciss) of 3600 pF at 24 V. This MOSFET is utilized across various industries, including automotive and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 24 V |