NTMFS4119NT3G
MOSFET N-CH 30V 11A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4119NT3G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 11 A at 25°C. With a low on-resistance (Rds On) of 3.5 mOhm at 10V Vgs and 29A Id, it minimizes conduction losses. The MOSFET exhibits a maximum gate charge (Qg) of 60 nC at 4.5 V, contributing to efficient switching performance. Key parameters include an input capacitance (Ciss) of 4800 pF at 24 V, and a threshold voltage (Vgs(th)) of 2.5 V at 250 µA. This component is housed in a compact 8-PowerTDFN, 5-Lead package (5-DFN 5x6), suitable for surface mounting. Operating across a temperature range of -55°C to 150°C (TJ), the NTMFS4119NT3G is utilized in various industries including automotive and industrial power management. The maximum power dissipation is rated at 900 mW (Ta).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 24 V |
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