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NTMFS4108NT3G

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NTMFS4108NT3G

MOSFET N-CH 30V 13.5A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4108NT3G is a 30V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a low Rds(on) of 2.2mOhm at 21A and 10V Vgs, facilitating reduced conduction losses. With a continuous drain current capability of 13.5A (Ta) and a maximum junction temperature of 150°C, it offers robust thermal performance. Key electrical parameters include a gate charge (Qg) of 54nC at 4.5V and input capacitance (Ciss) of 6000pF at 15V. The device supports a wide gate drive voltage range from 4.5V to 10V, with a maximum Vgs of ±20V. The NTMFS4108NT3G is housed in a compact 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 leads, suitable for surface mounting. Power dissipation is rated at 1.1W (Ta) and 96.2W (Tc). This MOSFET finds application in automotive, industrial power supplies, and power management systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13.5A (Ta)
Rds On (Max) @ Id, Vgs2.2mOhm @ 21A, 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta), 96.2W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 15 V

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