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NTMFS4108NT1G

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NTMFS4108NT1G

MOSFET N-CH 30V 13.5A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4108NT1G is an N-Channel Power MOSFET designed for efficient power management applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 13.5A at 25°C ambient. It exhibits a low on-resistance (Rds On) of 2.2mOhm maximum at 21A and 10V Vgs, optimized for minimal conduction losses. The device offers a typical gate charge (Qg) of 54 nC at 4.5V Vgs, facilitating faster switching speeds. Input capacitance (Ciss) is rated at a maximum of 6000 pF at 15V. Constructed with advanced MOSFET technology, the NTMFS4108NT1G is housed in a compact 5-DFN (5x6) (8-SOFL) package suitable for surface mounting. It supports a wide operating temperature range from -55°C to 150°C (TJ) and can dissipate up to 1.1W ambient or 96.2W case temperature. The maximum gate-source voltage (Vgs) is ±20V, and the threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA. This MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors where high-efficiency power switching is critical. It is supplied on tape and reel.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13.5A (Ta)
Rds On (Max) @ Id, Vgs2.2mOhm @ 21A, 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta), 96.2W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs54 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 15 V

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