NTMFS0D6N03CT1G
MOSFET, POWER, SINGLE N-CHANNEL,Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS0D6N03CT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage and a continuous drain current capability of 60A at 25°C ambient, scaling to 433A under typical thermal conditions. It offers a low on-resistance of 0.62mOhm maximum at 30A and 10V gate-source voltage. The device is packaged in an 8-PowerTDFN, 5-lead (5x6) surface mount configuration, supplied on tape and reel. Key specifications include a gate charge of 145nC (max) at 10V and input capacitance of 10500pF (max) at 15V. Maximum power dissipation is 3.9W ambient and 200W at case temperature. This MOSFET is suitable for use in power management, automotive, and industrial systems where high efficiency and robust performance are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 45 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta), 433A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.62mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 280µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 15 V |
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