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NTMFS0D5N04XLT1G

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NTMFS0D5N04XLT1G

40V T10S IN S08FL HEFET GEN 2 PA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS0D5N04XLT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 455A at 25°C (Tc), with a maximum power dissipation of 194W (Tc). Optimized for efficient switching, it offers a low on-resistance (Rds On) of 0.49mOhm at 50A and 10Vgs. The device utilizes a Metal Oxide technology and is housed in an 8-DFN (5x6) package for surface mounting, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 127 nC at 10Vgs and input capacitance (Ciss) of 9444 pF at 20Vds. It operates across a temperature range of -55°C to 175°C (TJ) and supports gate-source voltages up to ±20V. This component is suitable for use in power management and high-current switching applications across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C455A (Tc)
Rds On (Max) @ Id, Vgs0.49mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)194W (Tc)
Vgs(th) (Max) @ Id2.2V @ 330µA
Supplier Device Package8-DFN (5x6)
Grade-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9444 pF @ 20 V
Qualification-

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