NTMD4884NFR2G
MOSFET N-CH 30V 3.3A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMD4884NFR2G is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 3.3A at 25°C, with a maximum power dissipation of 770mW. Its low on-resistance (Rds On) of 48mOhm at 4A and 10V, coupled with a gate charge (Qg) of 4.2 nC at 4.5V, ensures optimal performance in demanding circuits. The device includes an integrated Schottky diode for enhanced protection. Packaged in an 8-SOIC (0.154", 3.90mm Width) format and supplied on tape and reel, the NTMD4884NFR2G is suitable for surface mounting. Operating across a temperature range of -55°C to 150°C, this MOSFET is utilized in various industries, including consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 4A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 770mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 15 V |
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