NTMD4184PFR2G
MOSFET P-CH 30V 2.3A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMD4184PFR2G is a P-Channel MOSFET designed for power management applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 2.3A at 25°C. The Rds On is specified at a maximum of 95mOhm at 3A and 10V gate drive. This device incorporates a Schottky diode, providing enhanced performance characteristics, and is housed in an 8-SOIC package suitable for surface mounting. Key parameters include a Gate Charge (Qg) of 4.2 nC at 4.5V and an input capacitance (Ciss) of 360 pF at 10V. The maximum power dissipation is 770mW. This MOSFET is utilized in industries such as automotive and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 3A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 770mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 10 V |