NTLUS4C16NTBG
MOSFET N-CH 30V 6.1A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLUS4C16NTBG is an N-Channel Power MOSFET from the µCool™ series, designed for efficient power management applications. This component features a 30 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6.1 A at 25°C (Ta). With a low on-resistance (Rds On) of 11.4 mOhm maximum at 8 A and 10 V Vgs, it minimizes conduction losses. The MOSFET is housed in a compact 6-UDFN (1.6x1.6) package, suitable for space-constrained designs and employing surface mount technology. Key electrical parameters include a gate charge (Qg) of 7.5 nC maximum at 4.5 V Vgs and an input capacitance (Ciss) of 690 pF maximum at 15 V Vds. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 650mW (Ta). This device is commonly utilized in consumer electronics, industrial automation, and automotive systems where high-efficiency power switching is critical. The part is supplied in tape and reel packaging.
Additional Information
Series: µCool™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerUFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 650mW (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 6-UDFN (1.6x1.6) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 15 V |
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