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NTLUS4C16NTAG

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NTLUS4C16NTAG

MOSFET N-CH 30V 9.4A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLUS4C16NTAG is a µCool™ series N-Channel Power MOSFET designed for efficient switching applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current rating of 9.4A (Ta) at 25°C, with a maximum power dissipation of 2.37W (Ta). The low on-resistance, specified at 11.4mOhm maximum at 8A and 10Vgs, is achieved with a 1.8V gate drive. The component offers a gate charge of 7.5 nC (max) at 4.5V and an input capacitance of 690 pF (max) at 15V. Operating with a maximum gate-source voltage of ±12V and a threshold voltage (Vgs(th)) of 1.1V (max) at 250µA, this MOSFET is housed in a compact 6-UDFN (1.6x1.6) package. It is suitable for high-density power management solutions across various industries, including automotive and consumer electronics. The component is supplied on Tape & Reel.

Additional Information

Series: µCool™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerUFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.4A (Ta)
Rds On (Max) @ Id, Vgs11.4mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)2.37W (Ta)
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device Package6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds690 pF @ 15 V

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