NTLUS4C12NTBG
MOSFET N-CH 30V 6.8A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLUS4C12NTBG is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 6.8 A at 25°C (Ta). The low on-resistance of 9 mOhm at 9 A and 10 Vgs is achieved through advanced MOSFET technology. With a maximum power dissipation of 630 mW (Ta), this device is suitable for thermal management in compact designs. The NTLUS4C12NTBG utilizes a 6-UDFN (2x2) exposed pad package for efficient surface mounting and thermal transfer. Key electrical characteristics include a gate charge (Qg) of 18 nC at 10 V and input capacitance (Ciss) of 1172 pF at 15 V. It operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20 V, with a threshold voltage (Vgs(th)) of 2.1 V at 250 µA. This component is commonly employed in power management, automotive, and industrial automation sectors. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 630mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 6-UDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1172 pF @ 15 V |
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