NTLUS4C12NTAG
MOSFET N-CH 30V 6.8A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLUS4C12NTAG is an N-Channel Power MOSFET designed for efficient power management applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 6.8A at 25°C ambient temperature, with a maximum power dissipation of 630mW. It offers a low on-resistance of 9mOhm at 9A and 10V, ensuring minimal conduction losses. The device is housed in a compact 6-UDFN (2x2) exposed pad package for excellent thermal performance and efficient board space utilization. Optimized for driving with gate voltages from 3.3V to 10V, it exhibits a gate charge of 18nC at 10V and an input capacitance of 1172pF at 15V. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive, industrial, and consumer electronics power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 630mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 6-UDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1172 pF @ 15 V |
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