NTLUS4195PZTBG
MOSFET P-CH 30V 2A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLUS4195PZTBG is a P-Channel MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 2A at 25°C, this component offers robust performance. Its low On-Resistance (Rds On) of 90mOhm at 3A and 10V gate drive ensures efficient power handling, with a maximum power dissipation of 600mW (Ta). The device operates within a wide temperature range of -55°C to 150°C (TJ).
Key electrical characteristics include a Gate Charge (Qg) of 5 nC at 4.5V and Input Capacitance (Ciss) of 250 pF at 15V. The NTLUS4195PZTBG is housed in a compact 6-UDFN (1.6x1.6) package, suitable for surface mount assembly. This MOSFET is utilized in various industries, including automotive, industrial automation, and consumer electronics, where reliable power switching is critical. The device supports gate-source voltages up to ±20V and has a threshold voltage (Vgs(th)) of 3V at 250µA. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerUFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 6-UDFN (1.6x1.6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 15 V |
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