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NTLUS4195PZTAG

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NTLUS4195PZTAG

MOSFET P-CH 30V 2A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLUS4195PZTAG is a P-Channel MOSFET designed for efficient power management. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) capability of 2A at 25°C. The Rds(On) is specified at a maximum of 90mOhm at 3A and 10V Vgs, with a drive voltage range from 4.5V to 10V. The device is housed in a compact 6-UDFN (1.6x1.6) package, suitable for surface mount applications. With a maximum power dissipation of 600mW (Ta), it is engineered for demanding thermal environments. Key electrical characteristics include a Gate Charge (Qg) of 5 nC at 4.5V Vgs and Input Capacitance (Ciss) of 250 pF at 15V Vds. This MOSFET is utilized in sectors such as consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerUFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs90mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)600mW (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 15 V

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