NTLUS3C18PZTBG
MOSFET P-CH 12V 4.4A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLUS3C18PZTBG is a P-Channel Power MOSFET designed for efficient power management applications. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 4.4A at 25°C (Ta), with a maximum power dissipation of 660mW (Ta). The NTLUS3C18PZTBG is housed in a compact 6-UDFN (1.6x1.6) package, suitable for surface mounting. Key performance characteristics include a low On-Resistance (Rds On) of 24mOhm at 7A and 4.5V Vgs, and a Gate Charge (Qg) of 15.8 nC at 4.5V. It operates across a temperature range of -55°C to 150°C (TJ) and supports gate drive voltages from 1.8V to 4.5V, with a maximum Vgs of ±8V. This MOSFET is utilized in various industries including consumer electronics and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-PowerUFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 660mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-UDFN (1.6x1.6) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 6 V |
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