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NTLUS3C18PZTAG

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NTLUS3C18PZTAG

MOSFET P-CH 12V 4.4A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLUS3C18PZTAG is a P-Channel MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 12 V and a continuous drain current (Id) of 4.4 A at 25°C. With a maximum Rds(on) of 24 mOhm at 7 A and 4.5 V drive voltage, it offers low conduction losses. The MOSFET is packaged in a compact 6-UDFN (1.6x1.6) with a surface mount type for ease of integration. Key electrical characteristics include a gate charge (Qg) of 15.8 nC at 4.5 V and input capacitance (Ciss) of 1570 pF at 6 V. Operating across a temperature range of -55°C to 150°C (TJ), this component is suitable for use in consumer electronics and industrial automation. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerUFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.4A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 7A, 4.5V
FET Feature-
Power Dissipation (Max)660mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs15.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1570 pF @ 6 V

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