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NTLUS3A90PZTBG

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NTLUS3A90PZTBG

MOSFET P-CH 20V 2.6A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLUS3A90PZTBG is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) capability of 2.6A at 25°C. With a maximum power dissipation of 600mW (Ta), it offers efficient operation. The device boasts a low Rds On of 62mOhm at 4A and 4.5V, ensuring minimal voltage drop and power loss. Fabricated using advanced MOSFET technology, it is housed in a compact 6-UDFN (1.6x1.6) package, suitable for surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 12.3 nC at 4.5V and an Input Capacitance (Ciss) of 950 pF at 10V. The NTLUS3A90PZTBG is commonly utilized in power management and switching circuits across industries such as consumer electronics, industrial automation, and automotive systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerUFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs62mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)600mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 10 V

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