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NTLUS3A90PZTAG

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NTLUS3A90PZTAG

MOSFET P-CH 20V 2.6A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLUS3A90PZTAG is a P-Channel Trench MOSFET from the µCool™ series, housed in a compact 6-UDFN (1.6x1.6) package. This device offers a continuous drain current of 2.6A (Ta) at 25°C and a drain-to-source voltage (Vdss) of 20V. Key performance characteristics include a maximum Rds(On) of 62mOhm at 4A and 4.5V, with a gate threshold voltage (Vgs(th)) of 1V at 250µA. The MOSFET features a gate charge of 12.3 nC at 4.5V and input capacitance (Ciss) of 950 pF at 10V. With a maximum power dissipation of 600mW (Ta), it is suitable for applications requiring efficient power switching. This component is commonly utilized in automotive systems and consumer electronics. It is supplied in Tape & Reel packaging.

Additional Information

Series: µCool™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerUFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs62mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)600mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 10 V

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