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NTLUS3A40PZTBG

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NTLUS3A40PZTBG

MOSFET P-CH 20V 4A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTLUS3A40PZTBG is a P-Channel MOSFET from the µCool™ series, designed for efficient power management. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 4A at 25°C. The low on-resistance is specified as 29mOhm at 6.4A and 4.5V Vgs, with a drive voltage range of 1.5V to 4.5V. The component’s Gate Charge (Qg) is a maximum of 29 nC at 4.5V Vgs, and input capacitance (Ciss) is 2600 pF at 15V Vds. It is housed in a compact 6-UDFN (2x2) exposed pad package, suitable for surface mounting. The maximum power dissipation is 700mW (Ta). This MOSFET is utilized in various applications including power switching, battery management, and load switching within the automotive and industrial sectors. Operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: µCool™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs29mOhm @ 6.4A, 4.5V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 15 V

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