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NTLUS3A40PZCTAG

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NTLUS3A40PZCTAG

MOSFET P-CH 20V 4A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTLUS3A40PZCTAG is a P-Channel MOSFET designed for power management applications. This device features a Drain-Source voltage (Vdss) of 20V and a continuous drain current (Id) of 4A at 25°C. The Rds On is specified at a maximum of 29mOhm at 6.4A and 4.5V, with a drive voltage range from 1.5V to 4.5V. The NTLUS3A40PZCTAG is housed in a compact 6-UDFN (2x2) exposed pad package, suitable for surface mounting. Key electrical characteristics include a maximum power dissipation of 700mW (Ta), a gate charge (Qg) of 29 nC at 4.5V, and an input capacitance (Ciss) of 2600 pF at 15V. This component operates within an ambient temperature range of -55°C to 150°C. It finds application in automotive and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs29mOhm @ 6.4A, 4.5V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 15 V

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