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NTLUS3A39PZCTBG

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NTLUS3A39PZCTBG

MOSFET P-CH 20V 3.4A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTLUS3A39PZCTBG, a P-Channel MOSFET from the µCool™ series, features a 20V drain-source voltage and 3.4A continuous drain current at 25°C. This device boasts a low Rds(on) of 39mOhm at 4A, 4.5V, and a gate charge of 10.4 nC at 4.5V. Optimized for efficient power management, it offers a maximum power dissipation of 600mW (Ta) and a low input capacitance of 920 pF. The 6-UDFN (1.6x1.6) package with tape and reel (TR) packaging facilitates high-density surface mount assembly. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in consumer electronics and power management circuits.

Additional Information

Series: µCool™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerUFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Rds On (Max) @ Id, Vgs39mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)600mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 15 V

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