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NTLUS3A39PZCTAG

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NTLUS3A39PZCTAG

MOSFET P-CH 20V 3.4A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLUS3A39PZCTAG is a P-Channel MOSFET from the µCool™ series, designed for high-density power management applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 3.4A at 25°C (Ta). The on-resistance (Rds On) is specified as a maximum of 39mOhm at 4A and 4.5V Vgs. Key characteristics include a Gate Charge (Qg) of 10.4 nC at 4.5V and an Input Capacitance (Ciss) of 920 pF at 15V. The MOSFET is housed in a compact 6-UDFN (1.6x1.6) package, suitable for surface mounting. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum power dissipation of 600mW (Ta). The drive voltage range for optimizing Rds On is from 1.5V to 4.5V. This component finds application in sectors such as consumer electronics and industrial automation.

Additional Information

Series: µCool™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-PowerUFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Rds On (Max) @ Id, Vgs39mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)600mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 15 V

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