NTLUS3A18PZTCG
MOSFET P-CH 20V 5.1A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLUS3A18PZTCG is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 20 V Drain-Source Voltage (Vdss) and a continuous drain current capability of 5.1 A at 25°C. The specified Rds(on) is a maximum of 18 mOhm at 7 A and 4.5 V, ensuring low conduction losses. With a distinct P-Channel enhancement mode technology, it offers a threshold voltage (Vgs(th)) of 1 V at 250 µA. The MOSFET is housed in a compact 6-UDFN (2x2) package with an exposed pad, suitable for surface mounting. Key electrical characteristics include an input capacitance (Ciss) of 2240 pF at 15 V and a gate charge (Qg) of 28 nC at 4.5 V. The NTLUS3A18PZTCG operates within an extended temperature range of -55°C to 150°C. This component finds application in power management solutions, automotive systems, and consumer electronics. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-UDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2240 pF @ 15 V |
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