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NTLUS3A18PZTAG

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NTLUS3A18PZTAG

MOSFET P-CH 20V 5.1A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLUS3A18PZTAG is a P-Channel MOSFET from the µCool™ series, designed for efficient power switching applications. This device features a 20V drain-source breakdown voltage (Vdss) and can handle a continuous drain current of 5.1A at 25°C ambient. With a low on-resistance of 18mOhm at 7A and 4.5V Vgs, it minimizes conduction losses. The MOSFET offers a gate charge (Qg) of 28nC maximum at 4.5V Vgs and an input capacitance (Ciss) of 2240pF maximum at 15V Vds. It is packaged in a compact 6-UDFN (2x2) with an exposed pad for enhanced thermal performance, dissipating up to 700mW at 25°C ambient. Operating across a temperature range of -55°C to 150°C (TJ), this component is suitable for use in consumer electronics and power management systems. The device is supplied on tape and reel.

Additional Information

Series: µCool™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.1A (Ta)
Rds On (Max) @ Id, Vgs18mOhm @ 7A, 4.5V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2240 pF @ 15 V

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