NTLUS3A18PZCTCG
MOSFET P-CH 20V 5.1A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLUS3A18PZCTCG is a P-Channel MOSFET designed for demanding applications requiring efficient power switching. This device features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 5.1 A at 25°C (Ta). With a low on-resistance (Rds On) of 18mOhm at 7A and 4.5V, it minimizes power loss during operation. The NTLUS3A18PZCTCG utilizes a 6-UDFN (2x2) exposed pad package for optimal thermal performance and is available on tape and reel. Key specifications include a gate charge (Qg) of 28 nC at 4.5 V and input capacitance (Ciss) of 2240 pF at 15 V. This component is commonly found in power management solutions, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-UDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2240 pF @ 15 V |
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