NTLUS3A18PZCTBG
MOSFET P-CH 20V 5.1A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLUS3A18PZCTBG is a P-Channel MOSFET with a Drain-Source voltage (Vdss) of 20 V and a continuous drain current (Id) of 5.1 A at 25°C (Ta). This device features a low on-resistance (Rds On) of 18 mOhm at 7 A and 4.5 V. The MOSFET is housed in a compact 6-UDFN (2x2) exposed pad package, suitable for surface mounting. It operates with a gate-source voltage (Vgs) range of ±8 V and a threshold voltage (Vgs(th)) of 1 V at 250 µA. Key electrical characteristics include a maximum gate charge (Qg) of 28 nC at 4.5 V and maximum input capacitance (Ciss) of 2240 pF at 15 V. This component is commonly utilized in power management applications within the automotive and industrial sectors. The NTLUS3A18PZCTBG is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-UDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2240 pF @ 15 V |
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