NTLUS3A18PZCTAG
MOSFET P-CH 20V 5.1A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLUS3A18PZCTAG is a P-Channel MOSFET designed for efficient power switching applications. This device features a 20 V drain-source voltage and a continuous drain current capability of 5.1 A at 25°C ambient temperature. With a low on-resistance of 18 mOhm maximum at 7 A and 4.5 V gate-source voltage, it minimizes conduction losses. The MOSFET is housed in a compact 6-UDFN (2x2) exposed pad package, suitable for surface mounting. Key electrical characteristics include a gate charge of 28 nC maximum at 4.5 V and an input capacitance of 2240 pF maximum at 15 V. Drive voltage requirements range from 1.5 V to 4.5 V. This component is commonly utilized in power management circuits within automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-UDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2240 pF @ 15 V |
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