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NTLUS3192PZTBG

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NTLUS3192PZTBG

MOSFET P-CH 20V 2.2A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLUS3192PZTBG is a P-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 2.2 A at 25°C. With a maximum Power Dissipation (Pd) of 600 mW (Ta), it is suitable for moderate power handling. The Rds On is specified at a maximum of 86 mOhm at 3 A and 4.5 V, with a drive voltage range of 1.5 V to 4.5 V. Key capacitance values include Input Capacitance (Ciss) of 450 pF maximum at 10 V and Gate Charge (Qg) of 8.5 nC maximum at 4.5 V. The device operates within a temperature range of -55°C to 150°C. Packaged in a compact 6-UDFN (1.6x1.6) with a 6-PowerUFDFN case, it is ideal for surface mount integration in sectors such as consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-PowerUFDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Rds On (Max) @ Id, Vgs86mOhm @ 3A, 4.5V
FET Feature-
Power Dissipation (Max)600mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 10 V

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