NTLUS3192PZTAG
MOSFET P-CH 20V 2.2A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLUS3192PZTAG is a P-Channel MOSFET designed for high-efficiency switching applications. This component features a 20 V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.2 A at 25°C (Ta). With a maximum power dissipation of 600mW (Ta), it is suitable for power management solutions. The device offers a low on-resistance (Rds On) of 85 mOhm at 3 A and 4.5 V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 8.5 nC at 4.5 V and input capacitance (Ciss) of 450 pF at 10 V. The NTLUS3192PZTAG is housed in a compact 6-UDFN (1.6x1.6) package, facilitating high-density board designs. This MOSFET is commonly utilized in consumer electronics, industrial automation, and automotive systems. It operates within an extended temperature range of -55°C to 150°C (TJ). The NTLUS3192PZTAG is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerUFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-UDFN (1.6x1.6) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 10 V |
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