NTLUS029N06T6TAG
MOSFET N-CH 60V 3.5A 6UDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLUS029N06T6TAG is a 60 V N-Channel Power MOSFET designed for demanding applications. This component features a maximum continuous drain current of 3.5 A (Ta) and a low on-resistance of 29 mOhm at 7 A, 10 V. With a gate charge of 7 nC at 10 V and input capacitance of 410 pF at 30 V, it offers efficient switching characteristics. The device is housed in a compact 6-UDFN (1.6x1.6) package, suitable for surface mounting. Its power dissipation is rated at 600 mW (Ta), and it operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerUFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600mW (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 15µA |
| Supplier Device Package | 6-UDFN (1.6x1.6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 30 V |
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