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NTLUF4189NZTBG

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NTLUF4189NZTBG

MOSFET N-CH 30V 1.2A 6UDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLUF4189NZTBG is a 30V N-Channel MOSFET designed for efficient power switching applications. This device features a low Rds(on) of 200mOhm at 1.5A and 4.5V Vgs, ensuring minimal conduction losses. With a continuous drain current of 1.2A (Ta) and a maximum power dissipation of 500mW (Ta), it is suitable for compact power management solutions. The NTLUF4189NZTBG is housed in a 6-UDFN (1.6x1.6) package, ideal for space-constrained designs. Key electrical characteristics include a gate charge of 3 nC at 4.5V and input capacitance of 95 pF at 15V. The integrated Schottky diode offers improved switching performance. This component is commonly utilized in consumer electronics and industrial automation. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UFDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.2A (Ta)
Rds On (Max) @ Id, Vgs200mOhm @ 1.5A, 4.5V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds95 pF @ 15 V

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