NTLJS5D0N03CTAG
MOSFET N-CH 30V 11.2A 6PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJS5D0N03CTAG is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 11.2 A at 25°C, with a maximum power dissipation of 860 mW. The NTLJS5D0N03CTAG offers a low on-resistance (Rds On) of 4.38 mOhm at 10A and 10V. It is available in a compact 6-PQFN (2x2) surface mount package, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 18 nC at 10 V and input capacitance (Ciss) of 1255 pF at 15 V. This MOSFET is suitable for use in automotive and industrial power management systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.38mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 6-PQFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255 pF @ 15 V |
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