NTLJS4D9N03HTAG
MOSFET N-CH 30V 9.5A 6PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJS4D9N03HTAG is an N-Channel power MOSFET designed for efficient switching applications. This device offers a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 9.5A at 25°C ambient. With a low on-resistance (Rds(on)) of 6.1mOhm at 10A and 4.5V Vgs, it minimizes conduction losses. The MOSFET features a gate charge (Qg) of 6.8 nC at 4.5V and an input capacitance (Ciss) of 1020 pF at 15V, facilitating fast switching speeds. It is housed in a compact 6-PQFN (2x2) surface mount package, suitable for space-constrained designs. The maximum power dissipation (Pd) is 860mW at 25°C ambient. This component is utilized in industries such as automotive and industrial automation. The onsemi NTLJS4D9N03HTAG operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 6-PQFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 15 V |
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