NTLJS4D7N03HTAG
MOSFET N-CH 25V 11.6A 6PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJS4D7N03HTAG is an N-Channel Power MOSFET designed for efficient power switching applications. Featuring a Drain-Source Voltage (Vdss) of 25V and a continuous drain current (Id) of 11.6A at 25°C, this component offers a low on-resistance (Rds On) of 4.1mOhm at 10A and 10V Vgs. The device is housed in a compact 6-PQFN (2x2) surface mount package, providing excellent thermal performance with a maximum power dissipation of 860mW. Key parameters include a gate charge (Qg) of 14nC at 10V and input capacitance (Ciss) of 851pF at 15V. The NTLJS4D7N03HTAG is suitable for use in a broad range of industries, including consumer electronics, industrial automation, and automotive systems requiring reliable power management solutions. It operates across an extended temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 6-PQFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 851 pF @ 15 V |
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