NTLJS4159NT1G
MOSFET N-CH 30V 3.6A 6WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJS4159NT1G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.6 A at 25°C. With a maximum Rds(on) of 35 mOhm at 2 A and 4.5 Vgs, it offers low conduction losses. The MOSFET is housed in a compact 6-WDFN (2x2) exposed pad package, enabling effective thermal management with a power dissipation of 700 mW (Ta). Key parameters include a gate charge (Qg) of 13 nC at 4.5 V and input capacitance (Ciss) of 1045 pF at 15 V. Operating across a temperature range of -55°C to 150°C (TJ), this component is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1045 pF @ 15 V |
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