NTLJS4149PTBG
MOSFET P-CH 30V 2.7A 6WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJS4149PTBG is a P-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.7A at 25°C (Ta). With a maximum on-resistance (Rds On) of 62mOhm at 4.5A and 4.5V gate-source voltage, it offers efficient power switching. The MOSFET is housed in a compact 6-WDFN (2x2) package with an exposed pad for enhanced thermal performance, rated for 700mW (Ta) power dissipation. Key electrical characteristics include a maximum gate charge (Qg) of 15 nC at 4.5V Vgs and an input capacitance (Ciss) of 960 pF at 15V Vds. It supports drive voltages from 2.5V to 4.5V and operates within a temperature range of -55°C to 150°C (TJ). This component is frequently utilized in power management and switching circuits across automotive and industrial sectors. The NTLJS4149PTBG is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 4.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 15 V |
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