NTLJS4149PTAG
MOSFET P-CH 30V 2.7A 6WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJS4149PTAG is a P-Channel MOSFET designed for power management applications. This device features a 30V drain-to-source voltage (Vds) and a continuous drain current (Id) capability of 2.7A at 25°C. With a maximum on-resistance (Rds On) of 62mOhm at 2A and 4.5V Vgs, it offers efficient power switching. The NTLJS4149PTAG is housed in a compact 6-WDFN (2x2) exposed pad package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 15 nC and input capacitance (Ciss) of 960 pF, both specified at relevant operating voltages. This component operates across a wide temperature range of -55°C to 150°C. Its specifications make it suitable for use in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 15 V |
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