NTLJS3D0N02P8ZTAG
MOSFET N-CH 20V 12.1A 6PQFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJS3D0N02P8ZTAG is a 20V N-Channel MOSFET designed for efficient power management applications. This component features a low on-resistance of 3.8mOhm at 10A and 4.5V Vgs, supported by a gate charge (Qg) of 21 nC at 4.5V. With a continuous drain current (Id) capability of 12.1A (Ta) and a maximum power dissipation of 860mW (Ta), it is suitable for demanding operational environments. The device operates across a temperature range of -55°C to 150°C (TJ) and utilizes a 6-PQFN (2x2) surface mount package. Key electrical characteristics include a drain-to-source voltage (Vdss) of 20V, input capacitance (Ciss) of 2165 pF at 10V, and a threshold voltage (Vgs(th)) of 1.2V at 250µA. This MOSFET is commonly employed in consumer electronics and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 860mW (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 6-PQFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2165 pF @ 10 V |
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