NTLJS3A18PZTWG
MOSFET P-CH 20V 5A 6WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJS3A18PZTWG is a P-Channel MOSFET designed for efficient power switching applications. This component features a 20V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 5A at 25°C. With a low on-resistance of 18mOhm at 7A and 4.5V Vgs, it minimizes conduction losses. The device operates with a gate-source voltage range of ±8V and exhibits a gate charge of 28 nC at 4.5V. Its input capacitance is 2240 pF at 15V. Packaged in a compact 6-WDFN (2x2) with an exposed pad, it is suitable for surface mounting and rated for a maximum power dissipation of 700mW. This MOSFET is commonly utilized in automotive and industrial power management solutions. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2240 pF @ 15 V |