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NTLJS3180PZTAG

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NTLJS3180PZTAG

MOSFET P-CH 20V 3.5A 6WDFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTLJS3180PZTAG is a P-Channel MOSFET designed for demanding applications. This device features a 20V Drain-Source Voltage (Vdss) and supports a continuous drain current of 3.5A at 25°C (Ta). With a maximum On-Resistance (Rds On) of 38mOhm at 3A and 4.5V Vgs, it offers efficient switching. The NTLJS3180PZTAG is housed in a compact 6-WDFN (2x2) surface mount package with an exposed pad, enabling effective thermal management with a maximum power dissipation of 700mW (Ta). Key electrical parameters include a Gate Charge (Qg) of 19.5 nC (Max) at 4.5V and an input capacitance (Ciss) of 1100 pF (Max) at 16V. Operating temperature ranges from -55°C to 150°C (TJ). This component finds utility in power switching, battery management, and load switching within automotive and industrial sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-WDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs38mOhm @ 3A, 4.5V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 16 V

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