NTLJS3113PTAG
MOSFET P-CH 20V 3.5A 6WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTLJS3113PTAG is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) capability of 3.5A at 25°C. With a maximum On-Resistance (Rds On) of 40mOhm at 3A and 4.5V Vgs, it offers efficient power switching. The MOSFET utilizes a 6-WDFN (2x2) package with an exposed pad for enhanced thermal performance, dissipating up to 700mW (Ta). Key parameters include a Gate Charge (Qg) of 15.7 nC at 4.5V Vgs and Input Capacitance (Ciss) of 1329 pF at 16V Vds. It supports drive voltages from 1.5V to 4.5V and operates over an extended temperature range of -55°C to 150°C. This component is commonly found in power management circuits within automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1329 pF @ 16 V |
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