NTLJS3113PT1G
MOSFET P-CH 20V 3.5A 6WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTLJS3113PT1G is a P-Channel MOSFET from the µCool™ series, designed for high-density power management applications. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3.5A at 25°C. The Rds(On) is specified at a maximum of 40mOhm at 3A, 4.5V gate drive, with a drive voltage range of 1.5V to 4.5V. Housed in a compact 6-WDFN (2x2) package with an exposed pad, it offers excellent thermal performance with a maximum power dissipation of 700mW (Ta). Key electrical characteristics include input capacitance (Ciss) of 1329 pF at 16V and gate charge (Qg) of 15.7 nC at 4.5V. Operating across a wide temperature range of -55°C to 150°C, this MOSFET is suitable for use in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: µCool™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1329 pF @ 16 V |
Request a Quote
Clients Also Buy
NTLJS4114NT1G
MOSFET N-CH 30V 3.6A 6WDFN
NTLJS2103PTBG
MOSFET P-CH 12V 3.5A 6WDFN
NTLUS020N03CTAG
MOSFET N-CH 30V 5.3A 6UDFN
