NTLJS2103PTAG
MOSFET P-CH 12V 3.5A 6WDFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTLJS2103PTAG is a P-Channel MOSFET designed for high-efficiency power management applications. This device features a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain current (Id) of 3.5A at 25°C. Optimized for low on-resistance, it achieves a maximum Rds(On) of 40mOhm at 3A and 4.5V Vgs. The NTLJS2103PTAG is packaged in a compact 6-WDFN (2x2) surface-mount configuration with an exposed pad for enhanced thermal performance, dissipating a maximum of 700mW at 25°C. Key parameters include a gate charge (Qg) of 15nC at 4.5V Vgs and an input capacitance (Ciss) of 1157pF at 6V Vds. Operating across an extended temperature range of -55°C to 150°C, this MOSFET is suitable for deployment in portable electronics, battery management systems, and other power-sensitive designs where space and efficiency are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 6-WDFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1157 pF @ 6 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
